宁洪龙
姓名 | 宁洪龙 |
性别 | 男 |
学校 | 华南理工大学 |
部门 | 材料科学与工程学院 |
学位 | 研究员 |
学历 | 研究员 |
职称 | 研究员 |
联系方式 | 【发送到邮箱】 |
邮箱 | 【发送到邮箱】 |
人气 | |
软件产品登记测试 软件著作权666元代写全部资料 实用新型专利1875代写全部资料 集群智慧云企服 / 知识产权申请大平台 微信客服在线:543646 急速申请 包写包过 办事快、准、稳 |
更新日期:2023年12月15日 姓 名 宁洪龙 性 别 男 出生年月 1971年3月 籍贯 湖南株洲市 民 族 汉族 政治面貌 群众 最后学历 博士研究生 最后学位 工学博士 技术职称 研究员 导师类别 博、硕导 行政职务 Email ninghl@scut.edu.cn 工作单位 材料科学与工程学院 邮政编码 510640 通讯地址 天河区五山路381号华南理工大学光电楼305室 单位电话 87113542 个人主页 http://www2.scut.edu.cn/materials/2019/0830/c22687a332025/page.htm?id=1000530 个人简介 1993年和1999年分别学士和硕士毕业于中南工业大学,2004年博士毕业于清华大学,长期致力于有源信息新型显示薄膜晶体管阵列材料和结构及系统集成研究。原为韩国三星显示公司首席科学家,并担任韩国三星显示知识产权专利审查专家组委员,韩国三星6σ体系绿带认证导师;2013年回国加入华南理工大学发光材料与器件国家重点实验室,主要从事非晶氧化物半导体(AOS)材料与新型显示器件研究。曾作为项目负责人多次主持韩国三星公司的尖端研发项目,制备出多种基于新材料和新结构的高性能信息显示器件,并在实际生产中得到广泛应用。主要研究领域集中于新显示材料开发、薄膜晶体管(TFT)单元和阵列结构设计、柔性显示显示器件制备、印刷显示器件制备和信息显示器件性能优化;获得2017年广东省科技发明一等奖、2021年广东省科技进步二等奖和2022年中国材料研究学会科技进步二等奖。主持多项国家级与省部级项目,包括科技部国家重点研发计划、国家自然科学基金面上项目和广东省重大科研计划等。已发表论文300余篇(包括:Light Sci. Appl.、Adv. Funct. Mater.、Nano Energy、Mater. Horiz.、ACS Appl. Mat. Interfaces、J. Mater. Chem. C和Appl. Phys. Lett.等),其中被SCI、EI和ISTP检索200余篇,其中第一/通讯作者发表200多篇;已申请专利200余项,其中授权100多项;担任ACS Appl. Mat. Interfaces、J. Mater. Chem. C、Ceram Int.、IEEE Electr Device L、IEEE T Electron Dev、Soc. Inf. Display、发光学报、材料导报等学术期刊审稿人、液晶与显示、印刷与数字媒体技术研究、包装工程和Applied System Innovation的编委;担任广州市科创委专家,广东省工程师协会委员、广东省材料学会理事、广东省科技专家,广东省突发事件应急管理专家,江苏省科技咨询专家,江西省科技奖励评审专家,四川省科技奖励评审专家, 河北省科技奖励评审专家,国际信息显示协会北京分会专业技术委员会委员,中国物理协会液晶分会委员、教育部学位中心论文评阅专家。1) 2006年与C.O. Jeong合作开发三星显示的纯铝电极量产液晶显示器2) 2007年主持开发世界第一台化学镀Cu栅极15英寸液晶显示器3) 2008年与J. H. Song合作开发了世界第一台2微米Cu电极液晶显示器4) 2008年与J. H. Lee合作开发了世界第一台a-IGZO氧化物半导体15英寸液晶显示器5) 2009年与S. H. Cho合作开发了DPSS激光区域晶化LTPS行驱动集成窄边框14.1英寸量产液晶显示器6) 2009年主持开发世界第一台负感光有机物平坦化厚Cu电极的15英寸液晶显示器7) 2010年主持开发了世界第一台碳纳米管印刷柔性像素电极17英寸液晶显示器8) 2013年参与开发了中国第一款全彩色金属氧化物半导体柔性有源矩阵有机发光二极管显示屏9) 2016年参与开发了中国首款基于稀土掺杂氧化物TFT技术的全彩色量子点电致发光显示屏AM-QLED 工作经历 2013年-现在,华南理工大学,材料科学与工程学院,发光材料与器件国家重点实验室,研究员,博士生导师2011-2013年,韩国三星显示,次世代显示研究所,首席研究员2004-2011年,韩国三星电子,显示技术研发中心,高级研究员2001-2004年,清华大学,材料科学与工程学院,助教1993-1996年,天津铝合金厂,助理工程师 教育经历 1999-2004年,博士,清华大学;专业:材料学,研究电子材料与封装1996-1999年,硕士,中南工业大学;专业:粉末冶金,研究喷射沉积双金属1989-1993年,学士,中南工业大学;专业:金属材料及加工 获奖、荣誉称号 2022年获中国材料研究学会科技进步二等奖(排名第九)2021年获广东省科技进步二等奖(排名第一)2019年获广东省教育教学成果奖(高等教育类)一等奖(排名第四)2017年获广东省技术发明一等奖(排名第十) 社会、学会及学术兼职 1.广州市科创委专家2.广东省科技专家3.广东省突发事件应急管理专家4.广东省材料研究学会理事5.江苏省科技咨询专家6.江西省科技奖励评审专家7.四川省科技奖励评审专家8.河北省科技奖励评审专家9.国际信息显示协会北京分会专业技术委员会委员10.中国物理协会液晶分会委员11.教育部学位中心论文评阅专家12.中文核心期刊《液晶与显示》编委13.中文核心期刊《印刷与数字媒体技术研究》编委14.英文SCI期刊Applied System Innovation编委15.广东省工业和信息化厅专家16.广东省光学学会监事17.广州市新材料产业发展促进会专家18.广东省超高清视频产业计量测试联盟专家委员会委员19.广州市工业和信息化局产业专家 研究领域 薄膜晶体管材料与结构 (TFT Materials & Structure)氧化物半导体和低温多晶硅 (Oxide Semiconductor & Low Temperature Poly Silicon Backplane)高导互连有源平板显示 (High-conductivity Interconnection AMFPDs)新型触摸屏结构和工艺 (New Touch Screen Panel Structure & Process)印刷显示用纳米材料 (Nanometer Materials Application in Printable Display)薄膜器件成形和失效机理 (Thin Film Devices Forming & Failure Mechanism)显示用玻璃和柔性基板 (Glass & Flexible Substrate in Display)电子材料与封装技术 (Electronic Materials & Packaging Technology)印刷显示材料和制备 (Printable Display Materials & Fabrication) 科研项目 1) 金属氧化物半导体墨水关键技术研究,广东省教育厅-广东省普通高校重点领域专项(新一代电子信息),2023(主持)2) 高反射和高透射电子纸TFT 背板技术,国家重点研发计划重点专项,2021(主持)3) 印刷电子用高介电材料与关键技术开发,华南理工大学-中央高校培育项目, 2020(主持)4) 光显示用绿色高性能透明电极开发-广东省光信息材料与技术重点实验室, 2020(主持)5) 印刷电子用高性能电极材料研究-新型电子元器件关键材料与工艺国家重点实验室, 2019(主持)6) 柔性显示用金属氧化物薄膜晶体管电极材料的设计与研制-国家自然科学基金委面上项目, 2018(主持)7) 有源矩阵TFT柔性背板设计与制备,国家重点研发计划重点专项, 2016(主持)8) 可印刷高介电常数绝缘显示材料关键技术研究, 广东省科学技术厅- 2016年省科技发展专项资金(前沿与关键技术创新方向), 2016(主持)9) 可印刷高导互联显示用材料制备与关键技术研究, 广东省科学技术厅-2014年省科技发展专项资金(前沿与关键技术创新方向), 2014(主持)10) 印刷显示用电极材料关键技术研究, 华南理工大学-中央高校培育项目, 2015(主持)11) 面向超高分辨率显示背板关键技术研究,广东省教育厅-省级重大项目(自然科学类), 2015(主持)12) 高性能半导体材料的激光处理应用研究, 中国科学院长春光学精密机械与物理研究所-发光学及应用国家重点实验室, 2016(主持)13) 高性能金属氧化物半导体薄膜晶体管阵列研究,中国科学院-红外物理国家重点实验室, 2014(主持)14) 高导互连-氧化物半导体薄膜晶体管阵列研究,华南理工大学-发光材料与器件国家重点实验室, 2014(主持) 15) 杰出人才与团队引进计划, 华南理工大学, 2014(主持)16) 高导材料印刷技术及TFT器件系统集成研究, 南京皮埃路电子技术有限公司, 2016(主持)17) 抗酸氧化物半导体材料技术开发,深圳华星光电技术有限公司, 2013(主持)18) 超高纯铝靶材研发与制备,广东省科技创新战略专项资金(“大专项+任务清单”),2021(参与)19) 高迁移率氧化物半导体溅射靶材研究及显示应用, 广东省重点领域研发计划项目, 2020(参与)20) 薄膜电阻用调制型氮化物薄膜材料的研制-新型电子元器件关键材料与工艺国家重点实验室, 2020(参与)21) 31英寸高分辨率柔性印刷显示屏关键技术研发, 广东省重点领域研发计划项目, 2019(参与)22) 基于PI基材的柔性TFT功能化关键技术开发, 国家重点研发计划重点专项, 2017 (参与)23) 用于柔性显示屏的铜纳米柱阵列互联技术研究, 华南理工大学-金属材料高效近净成形技术与装备教育部重点实验室, 2016 (参与)24) 高效率、长寿命杂化白光OLED器件的研究, 上海大学-新型显示技术及应用集成教育部重点实验室, 2016(参与)25) 用于超高分辨显示器件的高迁移率氧化物薄膜晶体管研究, 广东省科学技术厅-2016年省科技发展专项资金(基础与应用基础研究方向), 2016(参与)26) 柔性AMOLED显示触控屏检测技术与设备研究, 广东省科学技术厅-2016年省科技发展专项资金(协同创新与平台环境建设方向), 2016(参与)27) 铜纳米结构在柔性AMOLED器件互联技术中的应用研究, 广东省教育厅-特色创新类项目, 2016(参与)28) 溶液加工及印刷显示器件制备工艺研究,中国科技部-国家重点基础研究发展计划(973计划), 2015(参与)29) 基于叠层复合有源层的高迁移率氧化物薄膜晶体管,清华大学-新型陶瓷与精细工艺国家重点实验室, 2015(参与)30) 可印刷型高性能有机高分子发光材料研究, 广东省科学技术厅-国家级重大培育项目(自然科学类), 2015(参与)31) 聚集诱导发光新材料及应用,广东省科技厅-第三批创新科研团队, 2012(参与)32) 光化学蚀刻成型技术,中国教育部-自然科学基金, 2002(参与) 发表论文 1) 磁控溅射制备铝、钛掺杂钽氮化合物薄膜的研究, 材料研究与应用, 2023, 已接受2) 基于非标高分辨率LCos的视频驱动方案, 单片机与嵌入式系统应用, 2023, 已接受3) 旋涂法制备柔性聚酰亚胺基板实验设计,广东化工,2023, 已接受4) Flexible High Entropy -PVA Dielectric Films were Prepared at Low Temperature and Applied to IGZO-TFT, J PHYS CHEM LETT, 2023, Accepted (SCI, IF:5.700)5) Rapid and Low-temperature Preparation of Tungsten Oxide Electrochromic Thin Films by Oxygen Plasma Treatment, OPT MATER, 2023, Accepted (SCI, IF:3.900)6) High-performance and Stability Electrochromic Devices with Water Isotopologue, J PHYS CHEM LETT, 2023, Accepted (SCI, IF:5.700)7) Research and progress of inorganic infrared electrochromic materials and devices, RECENT PAT NANOTECH, 2023, 10.2174/1872210517666230330104953 (SCI, IF:2.321)8) Improvement of PrIZO Thin Films by O2 Plasma Treatment Combined with Low-Temperature Annealing for Thin-Film Transistors, IEEE T ELECTRON DEV, 2023, 10.1109/TED.2023.3299896 (SCI, IF:3.100)9) Bend-resistant and energy-friendly GO-PVA/PVA polymer electret synaptic transistors for neuromorphic computations, ADV FUNCT MATER, 2023, 10.1002/adfm.202308127 (SCI, IF:19.000)10) Machine learning-guided investigation for a high-performance electrochromic device based on ammonium metatungstate-iron (II) chloride-heavy water electrochromic liquid, J MATER CHEM C, 2023, 11, 12776-12784 (SCI, IF:6.400)11) The hump phenomenon and instability of oxide TFT were eliminated by interfacial passivation and UV+thermal annealing treatment, ACS Appl. Electron. Mater., 2023, 5(9), 4846-4862 (SCI, IF:4.700)12) Solution-processed transparent PVP:HfO2 hybrid dielectric films with low leakage current density and high k, SURF INTERFACES, 2023, 42(11), 103357 (SCI, IF:6.200)13) Ag-doped Cu-Cr-Zr alloy electrode film by co-sputtering for flexible optoelectronic applications, J ALLOY COMPD, 2023, 968(12), 171962 (SCI, IF:6.200)14) Solution-processed high entropy metal oxides as dielectric layers with high transmittance and performance and application in thin film transistors, SURF INTERFACES, 2023, 40(7), 103147 (SCI, IF:6.200)15) 喷墨打印电子用功能墨水的研究进展, 印刷与数字媒体技术研究, 2023, 224(3), 1-1616) Research Progress of Micro-LED Display Technology, Crystals, 2023, 13(7), 1001 (SCI, IF:2.700)17) TinyML的研究现状及展望, 单片机与嵌入式系统应用, 2023, 23(2), 7-1118) 基于碳纤维浆料的柔性薄膜弯曲传感器制备与研究, 材料研究与应用, 2023, 17(2), 323-32819) Study on the Film-Forming Mechanism of Polymer-Metal Oxide Composite Ink Systems Containing Different Polymer Molecules, Langmuir, 2023, 39(19), 6803-6811 (SCI, IF:3.900)20) Band Structure Engineering Induced Ultraviolet–Visible Emission Bulk Carbon Nitride with Near-Unity Quantum Yield for Information Security, LASER PHOTONICS REV, 2023, 2300301 (SCI, IF:11.000)21) 基于Swin-Transformer的磁瓦缺陷检测, 现代计算机, 2023, 29(9), 68-7322) Graphene oxide as a promising nanofiller for polymer composite, Surf. Interfaces, 2023, 37(4). 102747 (SCI, IF:6.137)23) Solution-processed, flexible, and highly transparent ZrO2:PVP hybrid dielectric layer, Org Electron, 2023, 116(5), 106759 (SCI, IF:3.868)24) Effect of Surface Treatment on Performance and Internal Stacking Mode of Electrohydrodynamic Printed Graphene and Its Microsupercapacitor, ACS Appl Mater Inter, 2023, 15(2), 3621-363225) 钽氮化合物电阻薄膜的研究进展, 真空, 2022, 59(6), 34-39 (SCI, IF:10.383)26) Bilayer Metal Oxide Channel Thin Film Transistor with Flat Interface Based on Smooth Transparent Nanopaper Substrate, IEEE Electr Device L, 2022, 43(12), 2113-2116 (SCI, IF:4.816)27) 微压电驱动技术及压电喷印在印刷电子中的应用, 数字印刷, 2022, 217(2): 1-1328) 喷墨打印制备柔性高精度导电图案研究进展, 材料导报, 2022, 36(20), 2101012729) Micro-LED显示及其驱动技术的研究进展, 液晶与显示, 2022, 37(11), 1395-141030) Fabrication of Schottky-Barrier-Oxide-Semiconductor Thin-film Transistors Via a Simple Aluminum Reaction Method, IEEE Electr Device L, 2022, 43(11), 1882-1885 (SCI, IF:4.816)31) From Traditional to Novel Printed Electrochromic Devices: Material, Structure and Device, Membranes, 2022, 12(11), 1039 (SCI, IF:4.562)32) Recent Advances in Flexible Resistive Random Access Memory, Applied System Innovation, 2022, 5(5), 91 (SCI, IF:3.2)33) Research Progresses in Microstructure Designs of Flexible Pressure Sensors, Polymers, 2022, 14(17), 3670 (SCI, IF:4.967)34) Investigation of an Electrochromic Device Based on Ammonium Metatungstate-Iron (II) Chloride Electrochromic Liquid, Micromachines, 2022, 13(8): 1345 (SCI, IF:3.523)35) Revealing the mechanism of electrochromic sticking image behavior in tungsten oxide film prepared from tungstate precursors, Surf. Interfaces, 2022, 33: 102238 (SCI, IF:6.137)36) 电子纸用柔性薄膜晶体管的研究进展, 液晶与显示, 2022, 37(8): 948-95837) Morphological Regulation of Printed Low-temperature Conductive Ink, Langmuir, Langmuir, 2022, 38(32): 9955–9966 (SCI, IF:4.384)38) Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors, Surf. Interfaces, 2022, 33: 102184 (SCI, IF:6.137)39) An automatic defect-inspection method for optical isolators using image analysis, AT-Automatisierungstechnik, 2022, 70(7), 662-675 (SCI, IF:0.823)40) Controlled and sequential delivery of SDF-1α and magnesium ions from bifunctional hydrogel for bone regeneration, Polymers, 2022, 14(14): 2872 (SCI, IF:4.967)41) 氧化物靶材的制备及研究进展, 材料研究与应用, 2022, 16(3), 362-36842) 溶液法制备透明SnO2薄膜微观结构和光电性能研究, 材料研究与应用, 2022, 16(3), 369-37543) 透明导电银纳米线薄膜及热稳定性研究, 材料研究与应用, 2022, 16(3), 376-38344) Application of tungsten oxide-based electrochromic devices for supercapacitors, Applied System Innovation, 2022, 5(4), 60 (SCI, IF:3.2)45) Application of Solution Method to Prepare High Transmittance Multicomponent Oxide Thin Films, Membranes, 2022, 12(7), 641 (SCI, IF:4.562)46) Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate, Membranes, 2022, 12(6), 590 (SCI, IF:4.562)47) Synthesis of silver nanorings through a glycerol-base polyol method, Mol Cryst Liq Cryst, 2022, 733(1), 39-45 (SCI, IF:0.599)48) Thermo-oxidative stability of SnO crystals and obtained few layer crystals by mechanical exfoliation, Mol Cryst Liq Cryst, 2022, 733(1), 69-75 (SCI, IF:0.599)49) Mini-LED Backlight Technology Progress for LCD, Crystals, 2022, 12(3), 313 (SCI, IF:2.404)50) A Strategy toward Realizing Narrow Line with High Electrical Conductivity by Electrohydrodynamic Printing, Membranes, 2022, 12(2), 141 (SCI, IF:4.106)51) High k PVP Titanium Dioxide Composite Dielectric with Low Leakage Current for Thin Film Transistor, Org Electron, 2022, 101(2), 106413 (SCI, IF:3.721) 52) Environmentally friendly, flexible and high performance PVA dielectric layer fabricated by solution method and its application in IGZO-TFT, Org Electron, 2022, 100(1), 106383 (SCI, IF:3.721)53) Fabrication of Flexible Electrochromic Film based on Amorphous Isopolytungstate by Low-Temperature Inkjet-Printed Process with a Solution Crystallization Kinetic-Controlled Strategy, CHEM ENG J, 2022, 427(1): 131840 (SCI, IF:13.273)54) CELL段OLED检测技术的现状及发展趋势, 光电子技术, 2021, 41(4), 324-33255) Transparent flexible IGZO thin film transistors fabricated at room temperature, Membranes, 2021, 12(1), 29 (SCI, IF:4.106)56) 复合金属薄膜层对金丝键合性能的影响, 真空, 2021, 58(06), 43-4757) Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method, Micromachines, 2021, 12(12), 1496 (SCI, IF:2.891)58) Research and progress of transparent, flexible tin oxide ultraviolet, Crystals, 2021, 11(12), 1479 (SCI, IF:2.404)59) High-Performance Inorganically Connected CuInSe2 Nanocrystal Thin-Film Transistors and Integrated Circuits Based on Solution Process of Colloidal Synthesis, Ligand Exchange, and Surface Treatment, Chem Mater, 2021, 33(22), 8559-8938 (SCI, IF:9.811)60) Inkjet Printing High Performance Flexible Electrodes via A Graphene Decorated Ag Ink, Surf. Interfaces, 2021, 28, 101609 (SCI, IF:4.837)61) High-Stability Silver Nanowires-Al2O3 Composite Flexible Transparent Electrodes Prepared by Electrodeposition, Nanomaterials, 2021, 11(11), 3047 (SCI, IF:5.076)62) Effect of laser energy on the properties of neodymium-doped indium zinc oxide thin films deposited by pulsed laser deposition, Superlattice Microst, 2021, 160: 107059 (SCI, IF:2.658)63) 压电印刷OLED优化及其应用, 液晶与显示,2021, 36(10): 1377-138764) 环境友好型InP量子点的合成及其发光性能的研究进展, 液晶与显示,2021, 36(10): 1341-135165) Zirconium-Aluminum Co-doping on Solution-processed Indium Oxide Thin Film and Deceives Measured by a Novel Nondestructive Method, Surf. Interfaces, 2021, 27, 101459 (SCI, IF:4.837)66) Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method, Micromachines, 2021, 12(9): 1044 (SCI, IF:2.891)67) Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with High Relative Dielectric Constant Prepared by Spin-Coating, Membranes, 2021, 11(8): 608 (SCI, IF:4.106)68) Highly conductive and adhesive ternary Cu–Cr–Zr alloy electrode for flexible optoelectronic applications, Superlattice Microst, 2021, 157, 106989 (SCI, IF: 2.658)69) High performance thin film transistors with Ga doped ZnO source and drain electrodes, J Phys D Appl Phys, 2021, 54, 365101 (SCI, IF:3.169)70) High-Entropy Oxides: Advanced Research on Electrical Properties, Coatings, 2021, 11(6), 628 (SCI, IF:2.33)71) Binary solvent system for piezoelectric printing crack-free PAM/ZrOx hybrid thin film through nanostructure, Langmuir, 2021, 37(19), 5979-5985 (SCI, IF:3.557)72) The Investigation of Indium-free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering, Coatings, 2021, 11(5), 585 (SCI, IF:2.33)73) 印刷OLED/QLED材料研究进展, 数字印刷, 2021, 210, 1-1174) Amorphous NdIZO Thin Film Transistors with Contact-resistance-adjustable Cu S/D Electrode, Membranes, 2021, 11(5), 337 (SCI, IF:3.094)75) Recent developments in flexible transparent electrode, Crystals, 2021, 11(5), 511 (SCI, IF:2.404)76) 喷墨打印PVP绝缘层柔性薄膜晶体管研究, 液晶与显示, 2021, 36 (5), 633-64077) Alloy-electrode-assisted High-performance Enhancement-type Neodymium Doped Indium-zinc-oxide Thin Film Transistors on Polyimide Flexible Substrate, Research, 2021, 5758435 (SCI, IF:1.5)78) Tackling Challenges in Perovskite-Type Metal Oxide Photocatalysts, Energy Technol, 2021, 2001019 (SCI, IF:3.404)79) Implementing room-temperature fabrication of flexible amorphous Sn-Si-O TFTs via defect control, Adv Mater Interfaces, 2021, 2002193 (SCI, IF:4.948)80) Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance, Nanomaterials, 2021, 11(2), 522 (SCI, IF:4.324)81) Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor, Micromachines, 2021, 12(2), 111 (SCI, IF:2.523)82) 柔性与印刷OLED的研究进展,液晶与显示, 2021, 36(2), 27-22883) Temperature-Controlled Crystal Size of Wide Band Gap Nickel Oxide and Its Application in Electrochromism, Micromachines, 2021, 12(1), 80 (SCI, IF:2.523)84) A Physical Simulation Model of WO3 Electrochromic Films Based on the Continuous-Electron-Transfer Kinetics and Experimental Verification, ACS Appl Mater Inter, 2021, 13(3), 4768-4776 (SCI, IF:8.758)85) 金属氧化物薄膜晶体管激光退火研究,液晶与显示, 2020, 35(12), 1211-122186) 显示驱动芯片原理及发展现状, 液晶与显示, 2020, 35(11), 1156-116787) 溶胶-凝胶法制备氧化锡基薄膜的研究进展, 物理学报, 2020, 69(22), 228102 (SCI, IF:0.77)88) 可交联型P (VDF-CTFE-DB)/PMN-PT-Sm纳米复合薄膜的制备及介电、储能性能研究, 材料导报, 2020, 34(9), 18152-18158 (EI)89) 银纳米结构可控合成与应用研究进展, 东莞理工学院学报, 2020, 27(5), 70-77, 8390) 脉冲激光沉积法制备金属氧化物薄膜晶体管研究进展, 东莞理工学院学报, 2020, 27(5), 61-6991) Inkjet printing of homogeneous and green cellulose nanofibrils dielectric for high performance IGZO TFTs, J Mater Chem C, 2020, 8, 12578-12586 (SCI, IF:7.059)92) 可交联型P(VDF-CTFE-DB)/PMN-PT-Sm纳米复合薄膜的制备及介电、储能性能研究, 材料导报, 2020, 34 (9), 18151-18158 (EI)93) Functional metal oxide ink systems for drop-on-demand printed thin film transistors, Langmuir, 2020, 36(30), 8655-8667 (SCI, IF:3.75)94) OLED电视残影消除和寿命提升研究,液晶与显示, 2020, 35 (8), 795-80095) Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application, Coatings, 2020, 10(7), 698 (SCI, IF:2.33)96) Study of Inkjet-printed Silver Films Based on Nanoparticles and Metal-organic Decomposition Inks with Different Curing Methods, Micromachines, 2020, 11(7), 677 (SCI, IF:2.49)97) Effect of Zirconium Doping on Low Temperature Preparation and Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method, Coatings, 2020, 10(7), 620 (SCI, IF:2.33)98) 氧化亚锡薄膜晶体管的研究进展, 材料工程, 2020, 48(4), 83-88 (EI)99) Structure tailorable triple-phase and pure double-polar-phase flexible IF-WS2@poly(vinylidene fluoride) nanocomposites with enhanced electrical and mechanical properties, J Materiomics, 2020, 6(3), 563-572 (SCI, IF:8.02)100) Oxygen incorporated solution-processed high-κ La2O3 dielectrics with large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films, J Mater Chem C, 2020, 8, 5163 (SCI, IF: 6.28)101) Effects of Rapid Thermal Annealing on Wide Band Gap Tungsten Oxide Films, Superlattice Microst, 2020, 142, 106541 (SCI, IF:2.30)102) Preparation of Highly transparent (at 450-800 nm) SnO2 Homojunction by Solution Method and Its Photoresponse, Coatings, 2020, 10(4), 399 (SCI, IF:2.33)103) Origin of bias-stress and illumination instability in low-cost, wide bandgap amorphous Si-doped Tin oxide-based thin-film transistors, J Appl Phys, 2020, 53(23), 235102 (SCI, IF:2.33)104) Zirconia-Aluminum-oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-coating and The Application in Thin Film Transistor, Coatings, 2020, 10(3), 282 (SCI, IF:2.330)105) Effect of the ammonium tungsten precursor solution with the modification of glycerol on wide band gap WO3 thin film and its electrochromic properties, Micromachines, 2020, 11(3), 311 (SCI, IF:2.49)106) High-performance and Flexible Neodymium-Doped Indium-Zinc-Oxide Thin-film Transistor with All Copper Alloy Electrodes, IEEE Electr Device L, 2020, 41(3), 417-420 (SCI, IF:3.72) 107) Sol-gel synthesis of large-size polycrystalline stannous oxide and its oxidation behavior, CrystEngComm, 2020, 22, 1834-1838 (SCI, IF:3.36)108) Silver Nanorings Fabricated by Glycerol-base Co-solvent Polyol Method, Micromachines, 2020, 11(3), 236 (SCI, IF:2.49)109) Effect of Deep UV Laser Treatment on Silicon doped Tin Oxide Thin Film, J Soc Inf Display, 2020, 28, 194-203 (SCI, IF:1.102)110) Preparation and optimization of SnOx thin film by solution method at low temperature, Superlattice Microst, 2020, 139, 106400 (SCI, IF:2.30)111) Highly Efficient Metal-Free Two-Dimensional Luminescent Melem Nanosheets for Bioimaging, ACS Appl Mater Inter, 2020, 12, 2145-2151 (SCI, IF:8.69)112) Fabrication of High-Performance Solution Processed Thin Film Transistors by Introducing a Buffer Layer, Appl Surf Sci, 2020, 504, 144360 (SCI, IF:4.439)113) Effect of Oxygen Pressure on GZO Film as Active Layer of the TFT Fabricated at Room Temperature, Superlattice Microst, 2020, 137, 106317 (SCI, IF:2.099)114) Density functional theory study of the electronic and optical properties of Si incorporated SnO2, AIP Advances, 2019, 9(11), 115104 (SCI, IF:1.72)115) Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics, Adv Electron Mater, 2019, 5 (10), 1900427 (SCI, IF:5.49)116) Thermal Effect of Annealing-temperature on Solution-processed High-k ZrO2 Dielectrics, RSC Advances, 2019, 9, 42415-42422 (SCI, IF:3.16) 117) Self-assembled full nanowire P(VDF-TrFE) films with both anisotropic and high bidirectional piezoelectricity, Nanoscale, 2019, 11, 14896-14906 (SCI, IF:7.233)118) The performance of Zr-doped Al-Zn-Sn-O thin film transistor prepared by co-sputtering, Appl Sci, 2019, 9(23), 5150 (SCI, IF:2.52)119) Flexible thin-film transistors application of amorphous tin oxide-based semiconductors, J Soc Inf Display, 2019, 27, 769-775 (SCI, IF:1.102)120) Effective evaluation strategy towards low temperature solution-processed oxide dielectrics for TFT device, IEEE J Electron Devi, 2019, 7(1), 1140-1144 (SCI, IF:2.51)121) 柔性电致变色技术的研究与发展, 功能材料, 2019, 50(10), 10040-10046, 10056122) A strategy toward realizing ultrashort channels and microstructures array by piezoelectric inkjet printing, Nanomaterials, 2019, 9(11), 1515 (SCI, IF:4.034)123) Effects of Praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor, J Mater Sci, 2019, 54(24), 14778-14786 (SCI, IF:3.442)124) 柔性电极的喷墨印刷制备, 发光学报, 2019, 40(9), 1146-1158 (EI)125) 喷墨打印技术制备柔性导电聚合物薄膜图案, 实验技术与管理, 2019, 36(8), 52-56126) 喷墨打印中的界面润湿问题, 材料导报, 2019, 33(19), 3236-3241 (EI) 127) 基于多成核机制的银纳米线制备研究, 材料导报, 2019, 33(Z1), 303-306128) Inkjet-printed uniform silver electrodes array in a-IGZO TFTs by regulating piezoelectric waveforms, Mol Cryst Liq Cryst, 2019, 676(1), 36-43 (SCI, IF:0.559)129) The effect of different annealing temperature on transparent conductive SnO2 thin film by solution process, Mol Cryst Liq Cryst, 2019, 676(1), 44-49 (SCI, IF:0.559)130) The effect of zirconium doping on solution-processed indium oxide thin films measured by a novel nondestructive testing method (microwave photoconductivity decay), Coatings, 2019, 9(7), 426 (SCI, IF:2.330)131) 纳米晶太阳电池在光电信息实验中的教学实践, 高教学刊, 2019, 12, 92-95132) 面向本科实验教学的大型仪器设备管理, 中国高校科技, 2019, 5, 24-26133) A polymer-doped ink system for threshold voltage modulation in printed metal oxide thin film transistor, J Phys Chem Lett, 2019, 10, 3415-3419 (SCI, IF:8.709)134) Tungsten Doped Stannic Oxide Transparent Conductive Thin Film using Preoxotungstic Acid Dopant, Superlattice Microst, 2019, 130, 277-284 (SCI, IF:2.099)135) Evaluation of Nd-Al doped indium-zinc oxide thin-film transistors by introducing a μ-PCD method, Semicond Sci Tech, 2019, 34, 055011 (SCI, IF: 2.280)136) Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor, Nanoscale Res Lett, 2019, 14(80), 1-10 (SCI, IF: 3.125)137) 旋涂法制备WO3薄膜电致变色性能研究, 发光学报, 2019, 40(2), 183-188 (EI)138) 退火温度对旋涂SnO2薄膜性能的影响, 发光学报, 2019, 40(2), 164-170 (EI) 139) Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping, ACS Appl Mater Inter, 2019, 11(5), 5232–5239 (SCI, IF:8.097)140) A simple, low cost ink system for Drop-On-Demand printing high performance metal oxide dielectric film at low temperature, ACS Appl Mater Inter, 2019, 11(5), 5193–5199 (SCI, IF:8.097)141) All-sputtering, High-transparency, Good-stability coplanar top gate thin film transistors, Appl Sci, 2019, 9(1), 83 (SCI, IF: 1.679)142) 铜金属化在显示薄膜晶体管中的应用, 材料导报, 2018, 32(Z3), 1-5,11 (EI)143) Highly conductive and transparent AZO films fabricated by PLD as source/drain electrodes for TFTs, Materials, 2018, 11(12), 2480 (SCI, IF:2.728)144) Capillary force Induced Air Film for Self-aligned Short Channel Pushing the Limits of Inkjet Printing, Soft Matter, 2018, 14, 9402-9410 (SCI, IF: 3.709)145) A study of contact properties between Molybdenum and amorphous silicon tin oxide (a-STO) thin film transistors, J Soc Inf Display, 2018, 26 (9), 735 (SCI, IF:1.102)146) Zig-zag Hollow Cracks of Silver Nanoparticles Film Regulated by its Drying Micro-environment, Nanoscale Res Lett, 2018, 13, 354 (SCI, IF: 3.125)147) Gel-switchable Droplets Front for Large-scale Uniformity of Inkjet Printed Silver Patterns, Adv Mater Technol, 2018, 1800243 (SCI, IF:4.622) 148) Characterization studies of the structure and properties of Zr-doped SnO2 thin films by spin-coating technique, Superlattice Microst, 2018, 123, 330-337 (SCI, IF:2.099)149) High-performance Thin Film Transistor with Nd: IZO/Al2O3 Nanolaminate Structure Processed at Room Temperature, Materials, 2018, 11(10), 1871 (SCI, IF:2.728)150) A Protonation Process to Enhance the Water Resistance of Transparent and Hazy Paper, ACS Sustain Chem Eng, 2018, 6(9), 12385-12392 (SCI, IF:6.140)151) 溶液法制备氧化锡薄膜及光学特性研究, 光学学报, 2018, 38(10) 1031001 (EI)152) 绿色柔性喷墨打印银纳米墨水研究, 材料导报, 2018, 32(17), 2959-2968 (EI)153) Enhancement of Electrical Characteristics and Stability of amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer, Materials, 2018, 11(8), 1440 (SCI, IF:2.728)154) Efficient Bipolar Blue AIEgens for High‐Performance Nondoped Blue OLEDs and Hybrid White OLEDs, Adv Funct Mater, 2018, 1803369 (SCI, IF:13.325)155) High-performance spin-coated aluminum oxide dielectric fabricated by a simple oxygen plasma-treatment process, J Phys D Appl Phys, 2018, 51(36), 365101 (SCI, IF:2.588)156) The Critical Impact of Solvent Evaporation on the Resolution of Inkjet Printed Nanoparticles Film, ACS Appl Mater Inter, 2018, 10(27), 22883-22888 (SCI, IF:7.501)157) 硅掺杂氧化锡柔性薄膜晶体管的制备与特性, 发光学报, 2018, 39(7), 968-973 (EI)158) Effects of Annealing Temperature on Optical Band Gap of Sol–gel Tungsten Trioxide Films, Micromachines, 2018, 9(8), 377 (SCI, IF:2.222)159) Inkjet Printed Electrodes in Thin Film Transistors, IEEE J Electron Devi, 2018, 6(1), 477-490 (SCI, IF:2.696)160) Enhanced transmittance modulation of SiO2 doped crystalline WO3 film prepared from PEO template, Coatings, 2018, 8(7), 228 (SCI, IF:2.175)161) Effect of Aluminum Oxide Passivation Layer and Copper Electrode on High Mobility of Amorphous Indium-Zinc-Oxide Thin Film Transistor, IEEE J Electron Devi, 2018, 6(1), 733-737 (SCI, IF:3.141)162) Morphology modulation of direct inkjet printing by enhancing sol-gel ink system with polymer and surfactant, Langmuir, 2018, 34(22), 6413-6419 (SCI, IF:3.833)163) 纳米纸衬底的制备、性能及其在柔性电子器件中的应用, 材料工程, 2018, 46(6), 1-10 (EI)164) 全固态WO3薄膜电致变色器件研究进展, 光电子技术, 2018, 38(1), 49-54165) Solution-processed high-k metal oxide dielectrics for thin film transistors with excellent bias stability, Appl Sci, 2018, , 8(5), 806 (SCI, IF:1.679)166) High-performance and Flexible Neodymium-doped Oxide Semiconductor Thin-film Transistors with Copper Alloy Bottom-gate Electrode, IEEE Electr Device L, 2018, 39(6), 839-842 (SCI, IF:3.048)167) Influence of Source/Drain electrodes on the Characteristics of amorphous Tin-Oxide-Based Thin-Film Transistors, Nanomaterials, 2018, 8(5), 293 (SCI, IF:3.553)168) 喷墨打印电极在薄膜晶体管中的应用, 材料导报, 2018, 32(3), 742-748 (EI)169) Reduced contact resistance of a-IGZO thin film transistors with inkjet-printed silver electrodes, J Phys D Appl Phys, 2018, 51, 165103 (SCI, IF:2.588)170) Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by using Metallic In Nanoparticles and Cu Electrodes, Nanomaterials, 2018, 8(4), 197 (SCI, IF:3.553)171) Effect of ITO serving as a barrier layer for Cu electrodes on Performance of a-IGZO TFT, IEEE Electr Device L, 2018, 39(4), 504-507 (SCI, IF:3.048)172) A Simple Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors, Materials, 2018, 11, 416 (SCI, IF:2.728)173) Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications, J Phys D Appl Phys, 2018, 51(11), 115105 (SCI, IF:2.588)174) Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors, Appl Phys Lett, 2018, 112, 103503 (SCI, IF:3.411)175) Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors, Sci Rep, 2018, 8, 4160 (SCI, IF:4.259)176) High-Performance Flexible Oxide TFTs: Optimization of a-IGZO Film by Modulating Voltage Waveform of Pulse DC Magnetron Sputtering without Post Treatments, J Mater Chem C, 2018, 6, 2522-2532 (SCI, IF:5.256)177) Lattice defects of ZnO and hybrids with GO: synthesis, characterization, EPR and optoelectronic properties, AIP ADV, 2018, 8(2), 025218 (SCI, IF:1.568)178) 涂法制备氧化锆介质层及其在TFT中的应用, 发光学报, 2018, 39(2), 214-218 (EI)179) Room-Temperature Fabrication of High-Quality High-k ZrO2 Dielectric films and their applications in High Performance Flexible Organic Transistors, IEEE Electr Device L, 2018, 39(2), 280-283 (SCI, IF:3.048)180) Facile room temperature routes to improve performance of IGZO thin film transistors by an ultrathin Al2O3 passivation layer, IEEE T Electron Dev, 2018, 65(2), 537-541 (SCI, IF:2.605)181) High conductivity & transparent aluminum-based multi-layer source/drain electrodes for thin film transistors, J Phys D Appl Phys, 2018, 51(6), 065103 (SCI, IF:2.588)182) Properties-adjustable Alumina-Zirconia nanolaminate dielectric fabricated by spin-coating, Nanomaterials, 2017, 7(12), 419 (SCI, IF:3.553) 183) High Mobility Solution-Processed C8-BTBT Organic Thin-Film Transistors via UV-Ozone Interface Modification, J Mater Chem C, 2017, 5, 10652-10659 (SCI, IF:5.256)184) High-Performance Doping-Free Hybrid White OLEDs Based on Blue Aggregation-Induced Emission Luminogens, ACS Appl Mater Inter, 2017, 9(39), 34162-34171 (SCI, IF:7.145)185) UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity, Nanoscale Res Lett, 2017, 12, 546 (SCI, IF: 2.833)186) Doping-free tandem white organic light-emitting diodes, SCI BULL, 2017, 62(17), 1193-1200 (SCI, IF:4.0)187) Highly transparent and self-extinguishing nanofibrillated cellulose-monolayer clay nanoplatelet hybrid films, Langmuir, 2017, 33(34), 8455-8462 (SCI, IF:3.833)188) Room-temperature fabrication of high-performance amorphous In-Ga-Zn-O/Al2O3 thin-film transistors on ultrasmooth and clear nanopaper, ACS Appl Mater Inter, 2017, 9(33), 27792-27800 (SCI, IF:7.145) 189) A simple method for high-performance solution-processed amorphous ZrO2 gate insulator TFT with high concentration precursor, Materials, 2017, 10(8), 972 (SCI, IF:2.728)190) Amorphous InGaZnO thin film transistor fabricated with printed silver salt ink Source/Drain electrodes, Appl Sci, 2017, 7(8), 844 (SCI, IF:1.679)191) High conductivity and adhesion of Cu-Cr-Zr alloy for TFT gate electrode, Appl Sci, 2017, 7(8), 820 (SCI, IF:1.679)192) All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by fully room temperature process, J Mater Chem C, 2017, 5, 7043-7050 (SCI, IF:5.256)193) High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer, IEEE Electr Device L., 2017, 38(7), 879-882 (SCI, IF: 3.048)194) 溶液法氧化物薄膜晶体管的印刷制备, 液晶与显示, 2017, 32(6), 443-454195) Island-like AZO/Al2O3 bilayer channel structure for thin film transistors, Adv Mater Interfaces, 4(10), 201700063 (SCI, IF:3.365)196) Homogeneous Surface Profiles of Inkjet Printed Silver Nanoparticle Films by Regulating Their Drying Micro-Environment, J Phys Chem C, 2017, 121(16), 8992-8998 (SCI, IF:4.509)197) 压电波形对喷墨打印电极的调控规律, 发光学报, 2017, 38 (5), 617-622 (EI)198) Highly conductive AZO thin films obtained by rationally optimizing substrate temperature and oxygen partial pressure, Mol Cryst Liq Cryst, 2017, 644(1), 190-196 (SCI, IF:0.532)199) A room temperature strategy towards enhanced performance and bias stability of oxide thin film transistor with a sandwich structure channel layer, Appl Phys Lett, 2017, 110(15), 028715 (SCI, IF:3.3)200) All-aluminum Thin Film Transistor Fabrication at Room Temperature, Materials, 2017, 10(3), 222 (SCI, IF:2.728)201) Programmable shape recovery process of water-responsive shape-memory polyvinyl alcohol by wettability contrast strategy, ACS Appl Mater Inter, 2017, 9, 5492-5502 (SCI, IF:7.145)202) 基于柔性显示器件应用的氧化铝介电层室温制备研究, 光学学报, 2017, 37(3), 0331001 (EI)203) Stable ambipolar organic–inorganic heterojunction field-effect transistors and inverters with Cytop interlayer, Rsc Adv, 2017, 7(10), 5966-5969 (SCI, IF:3.289)204) Direct inkjet printing of silver source/drain electrodes on Amorphous InGaZnO layer for thin-film transistors, Materials, 2017, 10(1), 51 (SCI, IF:2.728)205) Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film, Materials, 2017, 10(1), 24 (SCI, IF:2.728)206) Direct patterning of silver electrodes with 2.4μm channel length by piezoelectric inkjet printing, J Colloid Interf Sci,2017, 487, 68-72 (SCI, IF:3.783)207) A Novel Nondestructive Testing Method for Amorphous Si-Sn-O Films, J Phys D Appl Phys, 2016, 49, 505102 (SCI, IF:2.772)208) 室温生长AZO/Al2O3叠层薄膜晶体管性能研究, 发光学报,2016, 37(11), 77-82 (EI)209) Extremely high-efficiency and ultrasimplified hybrid white organic light-emitting diodes exploiting double multifunctional blue emitting layers, Light-Sci Appl, 2016, 5, e16137 (SCI, IF:14.603) 210) Enhanced adhesion and field emission of CuO nanowires synthesized by simply modified thermal oxidation technique, Nanotechnology, 2016, 27, 395605 (SCI, IF:3.573)211) Effects of Rare-Earth Element Dopants in High-Mobility InOx-Based Thin Film Transistors, IEEE Electr Device L., 2016, 37(9), 1139-1142 (SCI, IF:2.75)212) Effect of Post Treatment for Cu-Cr Source/ Drain Electrodes on a-IGZO TFTs, Materials, 2016, 9, 623 (SCI, IF:2.728)213) High-Performance Doping-Free Hybrid White Organic Light-Emitting Diodes: the Exploitation of Ultrathin Emitting Nanolayers (< 1 nm), Nano Energy, 2016, 26, 26-36 (SCI, IF:10.325)214) A low-power high-stability flexible scan driver integrated by IZO TFTs, IEEE T Electron Dev, 2016, 63(4), 1779-1782 (SCI, IF:2.47)215) High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer, Appl Phys Lett, 2016, 108, 112106 (SCI, IF:3.3) 216) Manipulation of Charge and Exciton Distribution Based on Blue Aggregation-Induced Emission Fluorophores: A Novel Concept to Achieve High-Performance Hybrid White Organic Light-Emitting Diodes, Adv Funct Mater, 2016, 26(5), 776-783 (SCI, IF:11.805)217) A new compensation pixel circuit with metal oxide thin-film transistors for active-matrix organic light-emitting diode displays, J Soc Inf Display, 2015, 23(6), 233-239 (SCI, IF:0.791)218) Harnessing charge and exciton distribution towards extremely high performance: the critical role of guests in single-emitting-layer white OLEDs, Mater Horiz, 2015, 2(5), 536-544 (SCI, IF:9.095)219) 白光有机发光二极管的研究进展, 物理化学报, 2015, 31(10), 1823-1852 (SCI, IF:0.852) 220) High-mobility thin film transistors with neodymium-substituted indium oxide active layer, Appl Phys Lett, 2015, 107, 112108 (SCI, IF:3.302)221) An ideal host-guest system to accomplish high-performance greenish yellow and hybrid white organic light-emitting diodes, Org Electron, 2015, 27, 29-34 (SCI, IF:3.827)222) Efficient single-emitting layer hybrid white organic light-emitting diodes with low efficiency roll-off, stable color and extremely high luminance, J Ind Eng Chem, 2015, 30(10), 85-91 (SCI, IF:3.512)223) 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究, 发光学报, 2015, 36(8), 935-40 (EI)224) Performance analysis of pre-oxidation process direct bonding copper substrate, ICEPT 2015, 2015, 1377-1381 (EI, ISTP)225) 铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善, 物理学报, 2015, 64(12), 126103 (SCI, IF:0.813)226) A host-guest system comprising high guest concentration to achieve simplified and high-performance hybrid white organic light-emitting diodes, J Mater Chem C, 2015, 3, 6359-6366 (SCI, IF:4.696)227) Effects of Nd in NdxIn1-xO3 Semiconductors for Thin-Film transistors, IEEE T Electron Dev, 2015, 62(7), 2226-2230 (SCI, IF:2.472)228) Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide, Rsc Adv, 2015, 5, 51440-51445 (SCI, IF:3.84)229) Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Copper Source and Drain Electrodes, IEEE Electr Device L., 2015, 36(4), 342-344 (SCI, IF:2.754)230) High-performance hybrid white organic light-emitting diodes employing p-type interlayers, J Ind Eng Chem, 2015, 1-5, 2375 (SCI, IF:3.512)231) Efficient hybrid white organic light-emitting diodes with extremely long lifetime: the effect of n-type interlayer, Sci Rep, 2014, 4, 7198 (SCI, IF:5.578)232) Extremely stable-color flexible white organic light-emitting diodes with efficiency exceeding 100 lm W−1, J Mater Chem C, 2014, 2(46), 9836-9841(SCI, IF:4.696)233) Effects of Solvent Treatment on the Characteristics of InGaZnO Thin-Film Transistors, Ecs J Solid State Sc, 2014, 3(9), 3081-3084(SCI, IF:1.5)234) Regulating charges and excitons in simplified hybrid white organic light-emitting diodes: The key role of concentration in single dopant host-guest systems, ORG ELECTRON, 2014, 15(10), 2616-2623(SCI, IF:3.827)235) Interface reaction thermodynamics of AgCuTi brazing filler metal and alumina ceramic, Adv. Mater. Res, 2014, 936, 1239-1246(EI, ISTP)236) 源漏电极的制备对氧化物薄膜晶体管性能的影响,物理学报, 2014, 63(3), 038501 (SCI, IF:0.813)237) Half-buried structure Cu bus line in TFT LCD, Key Eng Mater, 2010, 428-429, 329-334 (EI)238) Views on the low-resistant bus materials and their process architecture for the large-sized & post-ultra definition TFT-LCD, IMID 2008, October 13-17, 2008, 9-12 (EI)239) Learning, innovation and dynamic capability: an empirical research about south China enterprises, 2008 International Seminar on Business and Information Management, December 28-31, 2008, 140-143 (EI, ISTP)240) 陶瓷基板化学镀铜的预处理, 稀有金属材料与工程, 2004, 33(3), 321-323 (SCI, IF:0.4)241) 电子封装中的局部镀银研究,稀有金属材料与工程, 2004, 33(2), 176-178 (SCI, IF: 0.4)242) La, Fe (或Co)/Ti 对Cu-Cr-Zr合金时效特性的影响, 稀有金属材料与工程, 2004, 33(3), 267-270 (SCI, IF:0.4)243) 多层喷射沉积制备双金属板材的机理初探, 粉末冶金技术, 22(1), 2004, 12-5(EI)244) Investigation to the interface of DCB substrate, Surf Rev Lett, 2003, 10(1), 95-100 (SCI, IF:0.94)245) Research of alumina and brazing filler metal interface, Mater Sci Forum, 2003, 423-425, 495-500 (SCI, IF:0.613)246) Preoxidation of the Cu layer in direct bonding technology, Appl Surf Sci, 2003, 211(1-4), 250-258 (SCI, IF:1.295)247) Joining of sapphire and hot pressed Al2O3 using Ag70.5Cu27.5Ti2 brazing filler metal, Ceram Int, 2003, 29(6), 689-694 (SCI, IF:0.731)248) 多层喷射沉积铝/钢双金属板的轧制, 粉末冶金技术, 2003, 21(4), 228-231 (EI)249) Research of LTCC thermal conductivity, Mater Sci Forum, 2003, 423-425, 311-314 (SCI, IF:0.613)250) Analysis of phases in a Cu-Cr-Zr alloy, Scripta Mater, 2003, 48(1), 97-102 (SCI, IF=1.168)251) Precipitation in Cu-Ni-Si-Zn alloy for lead frame, Mater Lett, 2003, 57, 2135-2139 (SCI, IF:0.892)252) 混合集成电路铜功率外壳气密性失效分析,稀有金属材料与工程, 2003, 32(8), 650-653 (SCI, IF:0.4)253) 引线框架材料对铜合金与锡铅焊料界面组织的影响, 电子元件与材料, 2003, 22(4), 33-35, 45254) 封装中陶瓷外壳的滚镀工艺研究,湘潭矿业学院学报, 2002, 17(4), 39-41 (EI)255) 多层喷射沉积铝/钢双金属板材的研究,功能材料, 2002, 33(2), 166-168 (EI)256) 引线框架铜合金氧化特性的研究现状,功能材料, 2002, 33(1), 29-32 (EI)257) 铜基引线框架材料的研究与发展,功能材料, 2002, 33(1), 1-4 (EI)258) 喷射沉积技术与双金属材料的制备,兵器材料科学与工程, 2001, 24(1), 65-67 (EI)259) A study on the novel lead-free solder alloy, Pricm 4: Fourth Pacific Rim International Conference on Advanced Materials and Processing, I -II, 2001, 1095-1097(ISTP)260) 铝合金型材的宽展挤压,轻合金加工技术, 1998, 26(9), 25-28 出版专著和教材 1.印刷显示材料与技术2.现代离子镀膜技术3.Modern Ion Plating Technology (Elsevier) 科研创新 获批国际专利:1) Microcavity injection type electrochromic device, and manufacturing method therefor and application thereof, 2022-11-17, WO2022/237066A12) Aluminum oxide protected silver nanowire transparent electrode, prepation method therefor and use thereof, 2022-07-07, WO2022/142586A13) Low-cost electrochromic device and preparation method therefor, 2020-07-09, WO2020/140558A14) Method for preparing zirconium-aluminium oxide insulating layer thin film and laminated structure using solution method, 2020-06-04, WO2020/108140A15) Method for efficiently inspecting large area of microelectronic device, 2019-09-26, WO2019/179083A16) Dynamic dance 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ZL201910002046.X48) 一种基于少层氧化亚锡的场效应晶体管及其制备方法, 2018-10-19, 中国, ZL201811219278.249) 一种少层单晶氧化亚锡及其制备方法与应用, 2018-09-12, 中国, ZL201811062169.450) 一种基于银纳米线的透明电极及其制备方法, 2018-09-29, 中国, ZL201811147467.351) 一种检测溶液法绝缘层TFT质量的方法, 2018-07-26, 中国, ZL201810834600.652) 一种银纳米球及其制备方法与应用, 2018-09-29, 中国, ZL201811156354.X53) 一种高调制能力结晶三氧化钨电致变色薄膜及其制备方法, 2018-06-20, 中国, ZL201810637117.954) 一种大尺寸单晶氧化亚锡及其制备方法, 2018-05-29,中国, ZL201810527383.655) 一种镨铟锌氧化物薄膜晶体管及其制备方法, 2018-05-29,中国, ZL201810527382.156) 一种减少喷墨打印薄膜表面裂纹的热处理方法, 2018-01-26, 中国, ZL201810078909.757) 一种钕铟锌氧化物薄膜晶体管及其制备方法, 2018-03-15,中国, ZL201810213140.558) 基于柔性传感器的舞蹈动态影像捕捉和还原系统及控制方法, 2018-02-08, 中国, ZL201810126169.X 59) 一种全磁控溅射制备全透明顶栅结构薄膜晶体管的方法, 2018-01-23, 中国, ZL201810062341.X60) 一种有机发光显示面板及其制备方法, 2018-01-18, 中国, ZL201810048683.661) 一种连接不同线宽喷墨打印线的多段拼接技术, 2017-12-05, 中国, ZL201711269822.X62) 一种直接喷墨打印短沟道电极的方法, 2017-12-05, 中国, ZL201711269969.963) 一种UV预处理衬底改善打印氧化物薄膜形貌的方法, 2017-11-13, 中国, ZL201711112966.464) 一种氧化物薄膜晶体管栅电极及其制备方法, 2017-11-01, 中国, ZL201711057219.565) 一种喷墨打印墨水及由其制备金属氧化物薄膜的方法, 2017-11-22, 中国, ZL201711175602.066) 一种混合溶剂的喷墨打印墨水及其制备方法, 2017-11-22, 中国, ZL201711175627.067) 一种适用于堆栈式结构的打印基板的电流体打印方法及系统, 2017-09-29, 中国, ZL201710909585.268) 一种脉冲直流溅射波形调控半导体薄膜成分的方法, 2017-09-04,中国, ZL201710785172.869) 一种室温脉冲直流溅射波形优化的薄膜晶体管及其制备方法, 2017-09-04, 中国, ZL201710785090.370) 一种快速凝胶化氧化锆喷墨打印墨水及其制备方法和应用, 2017-09-04,中国, ZL201710785335.271) 一种通过电容反馈调节和控制电流体打印的方法及装置, 2017-08-31, 中国, ZL201710767245.072) 一种氧化锆喷墨打印墨水及其制备方法和应用, 2017-09-04,中国, ZL201710785310.273) 一种调控喷墨打印相邻液滴干燥形貌的方法, 2017-07-31, 中国, ZL201710640887.474) 一种喷墨打印薄膜与界面观测与调控的方法, 2017-06-29, 中国, ZL201710512228.275) 一种紫外光调控喷墨打印金属线边缘杂散颗粒的方法, 2017-06-29, 中国, ZL201710512247.576) 一种UV固化预处理银导电薄膜的制备方法, 2017-07-06,中国, ZL201710546148.977) 一种喷墨打印用墨水及制备方法以及由其打印的氧化锆薄膜, 2017-05-31, 中国, ZL201710398593.578) 一种喷墨打印氧化锆绝缘层用墨水及其制备方法, 2017-05-31, 中国, ZL201710399212.579) 一种印刷电极的紫外光固化后处理方法, 2016-11-16, 中国, ZL201611008357.X80) 一种薄膜晶体管印刷电极的制备方法, 2016-08-13, 中国, ZL201610665741.081) 薄膜晶体管阵列面板, 2016-03-30, 中国, ZL201610190504.382) 具有叠层有源层的薄膜晶体及其制备方法, 2016-01-12, 中国, ZL201610020616.483) 制备自修复透明触摸电极的组合物及制备自修复透明触摸电极的方法, 2014-05-29, 中国, ZL201410234829.884) 一种薄膜晶体管的源漏电极及制备方法、薄膜晶体管及制备方法, 2015-03-18, 中国, ZL201510119566.085) 一种电控光阀被动式发光器件及其制备工艺, 2014-07-18, 中国, ZL201410345527.886) 阵列基板及其制造方法, 2009-06-03, 中国, ZL200810173348.587) 一种薄膜晶体管, 2017-11-13, 中国, ZL201721502998.088) 一种显示用电子器件高导电联耦合电极, 2017-04-10, 中国, ZL201720367604.989) 一种栅极驱动单元及行栅极扫描驱动器, 2017-05-18, 中国, ZL201720551627.590) 一种点状图形喷墨打印系统, 2017-12-05, 中国, ZL201721671518.391) 一种高性能薄膜晶体管, 2017-07-26, 中国, ZL201720913631.192) 一种电子器件表面缺陷检测系统, 2018-03-19, 中国, ZL201820367522.993) 一种显示用电子器件铜合金电极, 2017-07-17, 中国, ZL201720864085.794) 一种氧化物薄膜晶体管, 2017-06-14, 中国, ZL201720690215.X95) 一种运算放大器, 2017-05-18, 中国, ZL201720551612.996) 一种类岛状电子传输的薄膜晶体管, 2017-05-23, 中国, ZL201720576037.897) 一种具有全铝透明源漏电极的透明薄膜晶体管, 2018-01-25, 中国, ZL201820126685.898) 一种均匀墨水打印线喷墨打印装置, 2017-07-13, 中国, ZL201720948500.799) 一种基于小尺寸薄膜材料红外光谱测试的夹具, 2017-11-13, 中国, ZL201721502872.3100) 一种非晶氧化物柔性薄膜晶体管, 2017-10-12, 中国, ZL201721312560.6101) 一种全面屏手机, 2018-08-13, 中国, ZL201821297020.X102) 一种非晶氧化物薄膜晶体管, 2017-06-14, 中国, ZL201720690728.0103) 一种用于喷墨打印针形载墨喷嘴的保护装置, 2017-06-27, 中国, ZL201720752403.0104) 一种多晶氧化物柔性薄膜晶体管, 2017-07-17, 中国, ZL201720865188.5105) 一种纳米纸衬底薄膜晶体管, 2017-06-14, 中国, ZL201720690662.5106) 一种氧化物薄膜晶体管纯铜复合结构源漏电极, 2017-08-25, 中国, ZL201721070207.1107) Display apparatus, 2017-03-21, 美国, US9599869B2108) Thin film transistor array panel and display device including the same, 2017-03-21, 美国, US9601520B2109) Display apparatus having low reflection polymer layer, 2016-01-12, 美国, US9236403B2110) Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same,2015-11-24, 美国, US9196746B2111) Display apparatus and method of manufacturing the display apparatus, 2015-06-30, 美国, US9070605B2112) Wire, method of manufacture, and related apparatus, 2015-06-16, 美国, US9057923B2113) Display apparatus and method of manufacturing the display apparatus, 2014-10-07, 美国, US8853688B2114) Thin film transistor array panel,2014-09-30, 美国, US8847228B2115) 금속 배선 제조 방법 및 금속 배선을 구비하는 표시 패널의제조 방법, 2014-07-28, 韩国, KR101423670B1(Metal wiring manufacturing methods, and equipped with metal wiring method of manufacturing a display panel)116) Display panel, 2014-06-24, 美国, US8759834B2117) Method for manufacturing display panel, 2013-07-23, 美国, US8492190B2118) Thin-film transistor substrate and method of fabricating the same, 2013-05-28, 美国, US8450850B2119) 薄膜トランジスタ表示板およびその製造方法, 2013-04-05, 日本, JP5236889(Thin-film transistor display panel and manufacturing method thereof)120) 박막 트랜지스터 표시판의 제조 방법, 2013-03-12, 韩国, KR101244895B1(Thin-film transistor manufacturing method of display panels)121) Display panel and method for manufacturing the same, 2012-06-12, 美国, US8199297B2122) Method of manufacturing the array substrate capable of decreasing a line resistance, 2011-11-15, 美国, US8058114B2123) Display substrate, 2011-10-25, 美国, US8044398B2124) Array substrate and method of manufacturing the same, 2010-07-20, 美国, US7759738B2125) 금속 배선 형성방법, 2008-07-22, 韩国, KR10-0847985B1(A method of forming metal wiring)奖励:1) 宁洪龙(9/9),印刷型高介电氧化物显示材料与技术,中国材料研究学会, 科学技术进步奖, 二等奖, 2022 (彭俊彪, 陆旭兵, 朱镇南, 姚日晖, 郭向茹, 蔡炜, 毛林山, 梁志豪, 宁洪龙)2) 宁洪龙(1/10), 高导互联印刷材料及其大面积显示应用 , 广东省科技厅, 科学技术进步奖, 二等奖, 2021 (宁洪龙, 吴海斌, 赵斌, 姚日晖, 付东, 陶瑞强, 余磊, 章勇, 宋永生, 彭俊彪)3) 宁洪龙(4/8), “三交叉、四融合”光电专业拔尖人才培养体系的构建与实践, 广东省教育厅, 2019年广东省教育教学成果奖(高等教育类), 一等奖, 2019(彭俊彪, 文尚胜, 许伟, 宁洪龙, 姚日晖, 吴为敬, 覃东欢, 王丹)4) 宁洪龙(1/10), 高光学调制能力、高循环稳定性的结晶WO3电致变色薄膜研究, 广东省团委, 广东第十五届“挑战杯”广东大学生课外学术科技作品竞赛, 特等奖, 2019(宁洪龙, 姚日晖, 张观广, 张旭, 王佳良, 江曼, 陈皇星, 吴琼, 李聪昊, 覃静欣)5) 宁洪龙(10/15), 氧化物薄膜晶体管技术及其在柔性有机发光显示中的应用, 广东省科技厅, 技术发明奖, 一等奖, 2017 (彭俊彪, 兰林锋, 徐苗, 王磊, 邹建华, 陶洪, 王坚, 吴为敬, 姚日晖, 宁洪龙, 徐华, 李民, 许伟, 周雷, 庞家威).6) 宁洪龙(1/5), 基于高分辨显示的抗酸氧化物半导体薄膜晶体管阵列研究, 广东省科学技术协会, 广东第六届材料创新大赛, 一等奖, 2016(宁洪龙, 刘贤哲, 陈建秋, 蔡炜, 章红科) 教学活动 本科课程:固体物理硕士课程:薄膜晶体管技术与应用博士课程:现代材料物理与化学 指导学生情况 √ 合作博士后:朱峰、方志强、杨曌、卢宽宽、黎振超、刘昊天★ 080500|材料科学与工程/材料物理与化学/学术博士:胡诗犇、陶瑞强、陈建秋、蔡炜、刘贤哲、朱镇南、钟锦耀、杨跃鑫、朱志刚★ 085600|材料与化工/材料工程(光电)/工程博士: 张洪斌、苏国平★ 085400 电子信息/工程博士:李牧云、刘泰江☆ 080500|材料科学与工程/材料物理与化学/学术硕士:曾勇、周艺聪、杨财桂、张啸尘、周尚雄、袁炜健、张观广、邹文昕、张子涵☆ 085600|材料与化工/材料工程(光电)/专业硕士:邓宇熹、邓培淼、李志航、张旭、梁志豪、陈俊龙、陈楠泓、刘泰江、曾璇、熊鑫、付钰斌、郭晨潇、吴振宇、邓泽能、姜博诚☆ 085600|材料与化工/材料工程(光电)/工程硕士:熊梅、肖松、袁林、李松举 |