教师主页移动版

教育背景 2009年-2013年 湖北大学物理学与电子技术学院 本科2013年-2018年 武汉大学物理学院硕博连读，导师：黄启俊 教授、常胜 教授

教育背景

研究领域 新型纳米电子器件仿真基于微处理器的电路设计

工作履历

科研项目 湖南大学科研启动经费，25万，2018-2022低维异质结隧穿场效应晶体管界面问题研究与性质调控，国家自科基金青年项目，23万，2020-2022 二维半导体器件的范德华异质集成及多功能耦合系统，国家自然科学基金重大项目（参与），50万，2020-2024湖南大学青年教师托举计划，20万，2020-2022

研究领域

学术成果 Li X, Lv Y, Tong Q, Liao L, Li K, Jiang C. Simulation of Transport Moiré Pattern in Van Der Waals Heterostructures. IEEE Electron Device Letters, 2023, 44(3): 544–547. Wang L, Zhang X, You Z, Yang Z, Guo M, Guo J, Liu H, Zhang X, Wang Z, Wang A, Lv Y, Zhang J, Yu X, Liu J, Chen C. A Molybdenum Disulfide Nanozyme with Charge‐Enhanced Activity for Ultrasound‐Mediated Cascade‐Catalytic Tumor Ferroptosis. Angewandte Chemie International Edition, 2023, 62(11). Su W, Zhang S, Liu C, Tian Q, Liu X, Li K, Lv Y, Liao L, Zou X. Interlayer Transition Induced Infrared Response in ReS2/2D Perovskite van der Waals Heterostructure Photodetector. Nano Letters, 2022, 22(24): 10192–10199. Luo P, Liu C, Lin J, Duan X, Zhang W, Ma C, Lv Y, Zou X, Liu Y, Schwierz F, Qin W, Liao L, He J, Liu X. Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation. Nature Electronics, 2022, 5(12): 849–858. Lv Y, Liu Y, Liao L, Qin W, Jiang C. Electronic Fluctuation of Graphene Nanoribbon MOSFETs Under a Full Quantum Dynamics Framework. IEEE Transactions on Electron Devices, 2021, 68(4): 1980–1985. He Y-F, Wang L-X, Xiao Z-X, Lv Y-W, Liao L, Jiang C-Z. Normal Strain-Induced Tunneling Behavior Promotion in van der Waals Heterostructures*. Chinese Physics Letters, 2020, 37(8): 088502. Ji Y, Yang R, Wang L, Song G, Wang A, Lv Y, Gao M, Zhang J, Yu X. Visible light active and noble metal free Nb4N5/TiO2 nanobelt surface heterostructure for plasmonic enhanced solar water splitting. Chemical Engineering Journal, 2020, 402(April): 126226. Lv Y, Huang Q, Chang S, Wang H, He J, Liu A, Ye S, Wang W. Activating impurity effect in edge nitrogen-doped chevron graphene nanoribbons. Journal of Physics Communications, 2018, 2(4): 45028. Zhang W, Hong R, Qin W, Lv Y, Ma J, Liao L, Li K, Jiang C. Enhanced performance of p-type SnO x thin film transistors through defect compensation. Journal of Physics: Condensed Matter, 2022, 34(40): 404003. Wang Z, Lv Y, Zhang L, Liao L, Jiang C. Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application. IEEE Transactions on Electron Devices, 2022, 69(8): 4725–4729. Qin W, Lv Y, Xia Z, Liao L, Jiang C. Van der Waals heterostructure tunnel FET with potential modulation beyond junction region. Science China Information Sciences, 2022, 65(10): 209401. Liu C, Zou X, Wu M, Wang Y, Lv Y, Duan X, Zhang S, Liu X, Wu W, Hu W, Fan Z, Liao L. Polarization‐Resolved Broadband MoS 2 /Black Phosphorus/MoS 2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio. Advanced Functional Materials, 2021, 31(23): 2100781. Yang R, Ji Y, Wang L, Song G, Wang A, Ding L, Ren N, Lv Y, Zhang J, Yu X. Crystalline Ni-Doped Sn3O4 Nanosheets for Photocatalytic H 2 Production. ACS Applied Nano Materials, 2020, 3(9): 9268–9275. Lv Y, Wang J, Yang G, Qin W, Li L, Wang H. How Can Si/Ge Core/Shell Nanowires Outperform Their Pure Material Counterparts? IEEE Transactions on Electron Devices, 2020, 67(3): 1327–1333. Lv Y, Tong Q, Liu Y, Li L, Chang S, Zhu W, Jiang C, Liao L. Band-Offset Degradation in van der Waals Heterojunctions. Physical Review Applied, 2019, 12(4): 044064. Lv Y, Liu Y, Qin W, Chang S, Jiang C, Liu Y, Liao L. Prediction of Stable and High-Performance Charge Transport in Zigzag Tellurene Nanoribbons. IEEE Transactions on Electron Devices, 2019, 66(5): 2365–2369. Yawei Lv, Qijun Huang, Sheng Chang*, Hao Wang, Jin He, Cun Wei, Anqi Liu, Shizhuo Ye, Wei Wang, Interface Coupling as a Crucial Factor for Spatial Localization of Electronic States in a Heterojunction of Graphene Nanoribbons, Physical Review Applied, 2019, 11(2): 024026 Yawei Lv, Wenjing Qin, Chunlan Wang, Lei Liao*, Xingqiang Liu*, Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors, Advanced Electronic Materials, 2019, 5(1): 1800569 Yawei Lv, Shizhuo Ye, Hao Wang, Jin He, Qijun Huang, Sheng Chang*, Strain Engineering of Chevron Graphene Nanoribbons, Journal of Applied Physics, 2019, 125(8): 082501 Yawei Lv, Qijun Huang, Sheng Chang*, Hao Wang, Jin He, Anqi Liu, Shizhuo Ye, Wei Wang, Activating Impurity Effect in Edge Nitrogen-Doped Chevron Graphene Nanoribbons, Journal of Physics Communications, 2018, 2(4): 045028 Yawei Lv, Anqi Liu, Qijun Huang, Sheng Chang*, Wenjing Qin, Shizhuo Ye, Hao Wang, Jin He, Restraining Strategy of the Stone–Wales Defect Effect on Graphene Nanoribbon MOSFETs, IEEE Electron Device Letters, 2018, 39(7): 1092-1095 Yawei Lv, Qijun Huang, Sheng Chang*, Hao Wang, Jin He, Highly Sensitive Bilayer Phosphorene Nanoribbon Pressure Sensor Based on the Energy Gap Modulation Mechanism: A Theoretical Study, IEEE Electron Device Letters, 2018, 38(9): 1313-1316 Yawei Lv, Wenjing Qin, Qijun Huang, Sheng Chang*, Hao Wang, Jin He, Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation, IEEE Transactions on Electron Devices, 2017, 64(6): 2694-2701 Yawei Lv, Sheng Chang*, Qijun Huang, Hao Wang, Jin He, Scaling Effect of Phosphorene Nanoribbon - Uncovering the Origin of Asymmetric Current Transport, Scientific Reports, 2016, 6: 38009 Yawei Lv, Sheng Chang*, Hao Wang, Jin He, Qijun Huang, Energy Gap Tunable Graphene Antidot Nanoribbon MOSFET: A Uniform Multiscale Analysis from Band Structure to Transport Properties, Carbon, 2016, 101: 143-151 Yawei Lv, Qijun Huang, Sheng Chang*, Hao Wang, Jin He, Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices, IEEE Transactions on Electron Devices, 2016, 63(11): 4514-4520 Yawei Lv, Qijun Huang, Hao Wang*, Sheng Chang, Jin He, A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel FET, IEEE Electron Device Letters, 2016, 37(10): 1354-1357 Yawei Lv, Hao Wang*, Sheng Chang, Jin He, Qijun Huang, Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Shapes, IEEE Transactions on Electron Devices, 2015, 62(11): 3547-3553 Yawei Lv., Hao Wang, Sheng Chang, Zhihao Yu, Jin He, Qijun Huang, Band Engineering of Graphene Nanomesh Field Effect Transistor under Multiscale Simulation Framework, 16th Annual Conference of the Chinese Society of Micro-Nano Technology, Chengdu, P.R. China, 2014.08.31-09.03 Shizhuo Ye, Ruohua Zhu, Qijun Huang, Jin He, Hao Wang, Yawei Lv, Sheng Chang*, A Transport Isolation by Orbital Hybridization Transformation Toward Graphene Nanoribbon-Based Nanostructure Integration, Nanotechnology, 2018, 29(45): 455704 Wenjing Qin, Feng Ren*, Russell P. Doerner, Guo Wei, Yawei Lv, Sheng Chang, Ming Tang, Huiqiu Deng, Changzhong Jiang, Yongqiang Wang*, Nanochannel Structures in W Enhance Radiation Tolerance, Acta Materialia, 2018, 153: 147-155 Ji Zhang, Yawei Lv, Sheng Chang*, Hao Wang, Jin He, Qijun Huang, Prior Knowledge Input Neural Network Method for GFET Description, Journal of Computational Electronics, 2016, 15(3): 911-918 Sheng Chang*, Lei Zhao, Yawei Lv, Hao Wang, Qijun Huang, Jin He, Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-effect Transistors, Micro & Nano Letters, 2015, 10(8): 400-403 赵磊，吕亚威，常胜*，王豪，黄启俊，何进，平面石墨烯纳米带隧穿场效应管理论设计，固体电子学研究与进展，2015，240：227-230

学术成果